Datasheet BSO104N03S - Infineon MOSFET, N, 30 V, SO-8 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N, 30 V, SO-8

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Docket:
BSO104N03S
OptiMOS®2 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for notebook DC/DC converters · Qualified according to JEDEC for target applications · N-channel · Logic level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance · Avalanche rated · Pb-free plating; RoHS compliant
1)
Product Summary V DS R DS(on),max ID 30 9.7 13 V m A

Specifications:

• Continuous Drain Current Id: 13 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• On Resistance Rds(on): 9.7 MOhm
• On State Resistance @ Vgs = 4.5V: 13.6 MOhm
• Package / Case: SOIC
• Pulse Current Idm: 52 A
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

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