Datasheet BSP75N - Infineon MOSFET, SMART SWITCH SOT-223 — 数据表

Infineon BSP75N

Part Number: BSP75N

详细说明

Manufacturer: Infineon

Description: MOSFET, SMART SWITCH SOT-223

Docket:
Smart Lowside Power Switch
HITFETв BSP 75N
Data Sheet V1.0 Features · · · · · · · Logic Level Input Input protection (ESD) Thermal shutdown with auto restart Overload protection Short circuit protection Overvoltage protection Current limitation
Application · All kinds of resistive, inductive and capacitive loads in switching applications · µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt Powernet · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology.

Fully protected by embedded protection functions. Type HITFETв BSP 75N Ordering Code Q67060-S7215 Package P-SOT223-4
Product Summary Parameter Continuous drain source voltage On-state resistance Current limitation Nominal load current Clamping energy Symbol Value 60 550 1 0.7 550 Unit V m A A mJ

Specifications:

Avalanche Single Pulse Energy Eas: 550mJ
Continuous Drain Current Id: 700 mA
Current Limit Min: 1 A
Drain Source Voltage Vds: 60 V
ESD HBM: 1 kV
Mounting Type: SMD
Number of Transistors: 1
On Resistance Rds(on): 500 MOhm
Package / Case: SOT-223
Power Dissipation Pd: 1.8 W
Power Dissipation Ptot Max: 1.8 W
Transistor Case Style: SOT-223
Transistor Polarity: N Channel

RoHS: Yes

Accessories:

LICEFA - V11-7-6-10
LICEFA - V11-7
Roth Elektronik - RE901