Datasheet IRF430 - International Rectifier MOSFET, N, TO-3 — 数据表

详细说明

Manufacturer: International Rectifier

Description: MOSFET, N, TO-3

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Docket:
PD - 90336F
IRF430 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL
Product Summary
Part Number IRF430 BVDSS 500V RDS(on) 1.5 ID 4.5A
The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Specifications:

• Avalanche Single Pulse Energy Eas: 1.1mJ
• Continuous Drain Current Id: 4.5 A
• Current Iar: 4.5 A
• Current Id Max: 4.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 500 V
• Fixing Centres: 30 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Lead Spacing: 11 mm
• Mounting Type: Through Hole
• Number of Pins: 2
• Number of Transistors: 1
• On Resistance Rds(on): 1.5 Ohm
• Package / Case: TO-3
• Power Dissipation Pd: 75 W
• Pulse Current Idm: 18 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-3
• Transistor Polarity: N Channel
• Voltage Vds Typ: 500 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Weight: 0.012kg

Accessories:

• Dow Corning - 2265931
• Multicomp - MK3301/S
• Multicomp - MK3304