Datasheet IRF7601PBF - International Rectifier MOSFET, N, MICRO-8 — 数据表
Part Number: IRF7601PBF
详细说明
Manufacturer: International Rectifier
Description: MOSFET, N, MICRO-8
Docket:
PD - 9.1261D
IRF7601
HEXFET® Power MOSFET
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Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching
Specifications:
- Capacitance Ciss Typ: 650 pF
- Charge Qrr @ Tj = 25В°C Typ: 69nC
- Continuous Drain Current Id: 5.7 A
- Current Id Max: 5.7 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 20 V
- External Depth: 5.03 mm
- External Length / Height: 1.11 mm
- External Width: 3.05 mm
- Full Power Rating Temperature: 25°C
- Gfs Min: 6.1A/V
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Lead Spacing: 0.65 mm
- Mounting Type: SMD
- Number of Pins: 8
- Number of Transistors: 1
- On Resistance Rds(on): 35 MOhm
- On State Resistance Max: 35 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: Micro8
- Power Dissipation Pd: 1.8 W
- Pulse Current Idm: 30 A
- Rate of Voltage Change dv / dt: 5V/ns
- Rds(on) Test Voltage Vgs: 4.5 V
- Reverse Recovery Time trr Typ: 51 ns
- Row Pitch: 4.24 mm
- SMD Marking: 7601
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 700 mV
- Transistor Case Style: MicroSOIC
- Transistor Polarity: N Channel
- Voltage Vds: 20 V
- Voltage Vgs Max: 12 V
RoHS: Yes
Accessories:
- LICEFA - V11-7-6-10
- LICEFA - V11-7
- Roth Elektronik - RE903