Datasheet IRF7807D1PBF - International Rectifier MOSFET, N, FETKY, SO-8 — 数据表

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Manufacturer: International Rectifier

Description: MOSFET, N, FETKY, SO-8

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Docket:
PD- 95208
IRF7807D1PbF
FETKY MOSFET / SCHOTTKY DIODE
· Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode · Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output · Low Conduction Losses · Low Switching Losses · Low Vf Schottky Rectifier · Lead-Free Description The FETKYTM family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings

Specifications:

• Continuous Drain Current Id: 8.3 A
• Current Id Max: 66 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Forward Current If(AV): 3.5 A
• Forward Voltage VF Max: 500 mV
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 25 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 66 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: 807D1
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1.2 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

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