Datasheet IRF7862PBF - International Rectifier MOSFET, N SO-8 — 数据表

详细说明

Manufacturer: International Rectifier

Description: MOSFET, N SO-8

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Docket:
PD - 97275A
IRF7862PbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.

Gate Rating l 100% tested for Rg l Lead-Free
VDSS

Specifications:

• Charge Qrr @ Tj = 25В°C Typ: 30nC
• Continuous Drain Current Id: 21 A
• Current Id Max: 21 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 3.7 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 170 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 5.4 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Max: 2.35 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• BONKOTE - BON102
• Electrolube - SMA10SL
• Roth Elektronik - RE932-01