Datasheet IRFB5620PBF - International Rectifier Transistor — 数据表

详细说明

Manufacturer: International Rectifier

Description: Transistor

Download Data Sheet

Docket:
PD - 96174
DIGITAL AUDIO MOSFET
Features
· Key Parameters Optimized for Class-D Audio Amplifier Applications · Low RDSON for Improved Efficiency · Low QG and QSW for Better THD and Improved Efficiency · Low QRR for Better THD and Lower EMI · 175°C Operating Junction Temperature for Ruggedness · Can Deliver up to 300W per Channel into 8 Load in Half-Bridge Configuration Amplifier
G S D

Specifications:

• Continuous Drain Current, Id: 25 mA
• Drain Source Voltage, Vds: 200 V
• On Resistance, Rds(on): 0.06 Ohm
• Power Dissipation, Pd: 144 W
• Rds(on) Test Voltage, Vgs: 10 V
• Threshold Voltage, Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB