Datasheet IRF8714GPBF - International Rectifier N CHANNEL MOSFET, 30 V, 14 mA — 数据表

详细说明

Manufacturer: International Rectifier

Description: N CHANNEL MOSFET, 30 V, 14 mA

Download Data Sheet

Docket:
PD - 96263
IRF8714GPbF
Applications HEXFET® Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 30V 8.7m @VGS = 10V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits A A l Very Low Gate Charge 1 8 D S l Very Low RDS(on) at 4.5V VGS 2 7 D S l Ultra-Low Gate Impedance 3 6 S D l Fully Characterized Avalanche Voltage 4 5 G D and Current l 20V VGS Max.

Gate Rating SO-8 Top View l 100% tested for Rg l Lead-Free l Halogen-Free Description The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8714GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications.
:

Specifications:

• Continuous Drain Current Id: 14 mA
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 87 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Polarity: N Channel

RoHS: Yes