Datasheet IRF640PBF - International Rectifier MOSFET TRANSISTOR N CH — 数据表

详细说明

Manufacturer: International Rectifier

Description: MOSFET TRANSISTOR N CH

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Docket:
IRF640, SiHF640
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single

Specifications:

• Continuous Drain Current Id: 18 A
• Current Id Max: 18 A
• Drain Source Voltage Vds: 200 V
• Number of Pins: 3
• On State Resistance: 180 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-220
• Power Dissipation Pd: 125 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 200 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes