Datasheet DE275-501N16A - IXYS RF MOSFET, N, RF, DE275 — 数据表

详细说明

Manufacturer: IXYS RF

Description: MOSFET, N, RF, DE275

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Docket:
DE275-501N16A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25°C Derate 1.9W/°C above 25°C Tc = 25°C

Specifications:

• Capacitance Ciss Typ: 1800 pF
• Continuous Drain Current Id: 16 A
• Current Id Max: 16 A
• Drain Source Voltage Vds: 500 V
• Number of Pins: 6
• On State Resistance: 400 MOhm
• Package / Case: DE-275
• Power Dissipation Pd: 590 W
• Rds(on) Test Voltage Vgs: 15 V
• Rise Time: 2 ns
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: DE-275
• Transistor Polarity: N Channel
• Voltage Vds Typ: 500 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 15 V

RoHS: Yes

其他名称:

DE275501N16A, DE275 501N16A