Datasheet DE475-102N21A - IXYS RF MOSFET, N, RF, DE475 — 数据表

详细说明

Manufacturer: IXYS RF

Description: MOSFET, N, RF, DE475

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Docket:
DE475-102N21A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS IDM, di/dt 100A/µs, VDD VDSS, Tj 150°C, RG = 0.2 IS = 0

Specifications:

• Capacitance Ciss Typ: 5500 pF
• Continuous Drain Current Id: 24 A
• Current Id Max: 24 A
• Drain Source Voltage Vds: 1 kV
• Number of Pins: 6
• On State Resistance: 410 MOhm
• Package / Case: DE-475
• Power Dissipation Pd: 1.8 kW
• Rds(on) Test Voltage Vgs: 15 V
• Rise Time: 5 ns
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: DE-475
• Transistor Polarity: N Channel
• Voltage Vds Typ: 1 kV
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 15 V

RoHS: Yes

其他名称:

DE475102N21A, DE475 102N21A