Datasheet IXFB52N90P - IXYS MOSFET, N CH, 900 V, 52 A, PLUS264 — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N CH, 900 V, 52 A, PLUS264

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Docket:
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB52N90P
VDSS ID25
RDS(on) trr

Specifications:

• Current Id Max: 52 A
• Drain Source Voltage Vds: 900 V
• Number of Pins: 3
• On State Resistance: 160 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.25 kW
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PLUS264
• Transistor Polarity: N Channel
• Voltage Vgs Max: 30 V

RoHS: Yes

Accessories:

• ON Semiconductor - MC33153DG