Datasheet IXFH12N100F - IXYS TRANSISTOR, MOSFET, THROUGH HOLE — 数据表

详细说明

Manufacturer: IXYS

Description: TRANSISTOR, MOSFET, THROUGH HOLE

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Docket:
Advance Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFH 12N100F VDSS IXFT 12N100F ID25 RDS(on)

Specifications:

• Current Id Max: 12 A
• Drain Source Voltage Vds: 1 kV
• Number of Pins: 3
• On State Resistance: 1.05 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 300 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-247AD
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V