Datasheet IXFH52N30Q - IXYS MOSFET, N, TO-247 — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS Ј IDM, di/dt Ј 100 A/ms, VDD Ј VDSS, TJ Ј 150°C, RG = 2 W TC = 25°C

Specifications:

• Avalanche Single Pulse Energy Eas: 1.5J
• Continuous Drain Current Id: 52 A
• Current Id Max: 52 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 300 V
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Through Hole
• N-channel Gate Charge: 150nC
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 60 MOhm
• On State Resistance: 60 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-247
• Power Dissipation Pd: 360 W
• Pulse Current Idm: 205 A
• Rate of Voltage Change dv / dt: 5V/ns
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 30mJ
• Reverse Recovery Time trr Typ: 250 ns
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-247
• Transistor Polarity: N Channel
• Transistor Type: MOSFET
• Voltage Vds Typ: 300 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Weight: 6 g

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 243 MI 247 H
• Fischer Elektronik - FK 243 MI 247 O
• Fischer Elektronik - SK 145/25 STS-220
• Fischer Elektronik - WLK 5