Datasheet IXFK180N15P - IXYS MOSFET, N, TO-264 — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-264

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Docket:
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Symbol VDSS VDGR VDS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Fc Weight Test Conditions
IXFK 180N15P IXFX 180N15P
VDSS = 150 V ID25 = 180 A RDS(on) 11 m trr 200 ns

Specifications:

• Capacitance Ciss Typ: 7000 pF
• Continuous Drain Current Id: 180 A
• Current Id Max: 180 A
• Drain Source Voltage Vds: 150 V
• Junction to Case Thermal Resistance A: 0.18°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 240nC
• Number of Pins: 3
• On State Resistance: 11 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-264
• Power Dissipation Pd: 830 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-264
• Transistor Polarity: N Channel
• Voltage Vds Typ: 150 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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