Datasheet IXFK36N60 - IXYS MOSFET, N, TO-264 — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-264

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Docket:
IXFK 32N60 IXFK 36N60
Preliminary Data
IXFN 32N60 IXFN 36N60
ID25 RDS(on) 0.18 0.25 t rr 250ns 250ns
VDSS

Specifications:

• Continuous Drain Current Id: 36 A
• Current Id Max: 36 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 600 V
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Through Hole
• N-channel Gate Charge: 325nC
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 180 MOhm
• On State Resistance: 180 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-264
• Power Dissipation Pd: 500 W
• Pulse Current Idm: 144 A
• Rate of Voltage Change dv / dt: 5V/ns
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 30mJ
• Reverse Recovery Time trr Typ: 250 ns
• Threshold Voltage Vgs Typ: 4.5 V
• Transistor Case Style: TO-264
• Transistor Polarity: N Channel
• Transistor Type: MOSFET
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4.5 V
• Weight: 0.00001kg

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A