Datasheet IXFK64N60P - IXYS MOSFET, N, TO-264 — 数据表
Part Number: IXFK64N60P
详细说明
Manufacturer: IXYS
Description: MOSFET, N, TO-264
Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 64N60P IXFX 64N60P
VDSS ID25
RDS(on) trr
Specifications:
- Capacitance Ciss Typ: 12000 pF
- Continuous Drain Current Id: 64 A
- Current Id Max: 64 A
- Drain Source Voltage Vds: 600 V
- Junction to Case Thermal Resistance A: 0.12°C/W
- Mounting Type: Through Hole
- N-channel Gate Charge: 200nC
- Number of Pins: 3
- On State Resistance: 96 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-264
- Power Dissipation Pd: 1.04 kW
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 200 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: TO-264
- Transistor Polarity: N Channel
- Voltage Vds Typ: 600 V
- Voltage Vgs Max: 30 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A