Datasheet IXFN200N10P - IXYS MOSFET, N, SOT-227B — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, IISOL 1 mA, Test Conditions
IXFN 200N10P
VDSS = 100 V ID25 = 200 A RDS(on) 7.5 m trr 150 ns

Specifications:

• Capacitance Ciss Typ: 7600 pF
• Continuous Drain Current Id: 200 A
• Current Id Max: 200 A
• Drain Source Voltage Vds: 100 V
• Junction to Case Thermal Resistance A: 0.22°C/W
• Mounting Type: Screw
• N-channel Gate Charge: 235nC
• Number of Pins: 4
• On State Resistance: 7.5 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 680 W
• Rds(on) Test Voltage Vgs: 15 V
• Reverse Recovery Time trr Max: 150 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900