Datasheet IXFN24N100 - IXYS MOSFET, N, SOT-227B — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
VDSS
ID25

Specifications:

• Avalanche Single Pulse Energy Eas: 3J
• Continuous Drain Current Id: 24 A
• Current Id Max: 24 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 1 kV
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Screw
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 390 MOhm
• On State Resistance: 390 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 600 W
• Pulse Current Idm: 96 A
• Rate of Voltage Change dv / dt: 5 V/µs
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 60mJ
• Reverse Recovery Time trr Typ: 250 ns
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 1 kV
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 5 V
• Weight: 0.04kg

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900