Datasheet IXFN36N100 - IXYS MOSFET, N, SOT-227B — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C
IXFN 36N100
VDSS ID25

Specifications:

• Avalanche Single Pulse Energy Eas: 4J
• Continuous Drain Current Id: 36 A
• Current Id Max: 36 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 1 kV
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Screw
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 240 MOhm
• On State Resistance: 240 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 700 W
• Pulse Current Idm: 144 A
• Rate of Voltage Change dv / dt: 5 V/µs
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 64mJ
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 1 kV
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 5.5 V
• Weight: 0.046kg

RoHS: Yes

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