Datasheet IXFR200N10P - IXYS MOSFET, N, ISOPLUS247 — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS247

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Docket:
PolarTM HiPerFET Power MOSFET
Electrically Isolated Tab
IXFR 200N10P
VDSS = 100 V ID25 = 133 A RDS(on) 9 m tRR 150 ns
N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated

Specifications:

• Capacitance Ciss Typ: 7600 pF
• Continuous Drain Current Id: 133 A
• Current Id Max: 133 A
• Drain Source Voltage Vds: 100 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 235nC
• Number of Pins: 3
• On State Resistance: 9 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: ISOPLUS-247
• Power Dissipation Pd: 300 W
• Rds(on) Test Voltage Vgs: 15 V
• Reverse Recovery Time trr Max: 150 ns
• Rth: 0.5
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOPLUS-247
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A