Datasheet IXFT26N60P - IXYS MOSFET, N, TO-268 — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-268

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Docket:
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS
VDSS = 600 V ID25 = 26 A RDS(on) 270 m trr 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt

Specifications:

• Capacitance Ciss Typ: 4150 pF
• Continuous Drain Current Id: 26 A
• Current Id Max: 26 A
• Drain Source Voltage Vds: 600 V
• Junction to Case Thermal Resistance A: 0.27°C/W
• Mounting Type: SMD
• N-channel Gate Charge: 72nC
• Number of Pins: 3
• On State Resistance: 270 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-268
• Power Dissipation Pd: 460 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-268
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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