Datasheet IXFV26N50PS - IXYS MOSFET, N, SMD, PLUS220 — 数据表
Part Number: IXFV26N50PS
详细说明
Manufacturer: IXYS
Description: MOSFET, N, SMD, PLUS220
Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M Continuos Transient TC = 25° C
IXFH 26N50P IXFV 26N50P IXFV 26N50PS
VDSS = ID25 = RDS(on) trr
Specifications:
- Capacitance Ciss Typ: 3600 pF
- Continuous Drain Current Id: 26 A
- Current Id Max: 26 A
- Drain Source Voltage Vds: 500 V
- Junction to Case Thermal Resistance A: 0.31°C/W
- Mounting Type: SMD
- N-channel Gate Charge: 60nC
- Number of Pins: 3
- On State Resistance: 230 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: PLUS220
- Power Dissipation Pd: 400 W
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 200 ns
- Threshold Voltage Vgs Typ: 5.5 V
- Transistor Case Style: PLUS220
- Transistor Polarity: N Channel
- Voltage Vds Typ: 500 V
- Voltage Vgs Max: 30 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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