Datasheet IXTQ150N15P - IXYS MOSFET, N, TO-3P — 数据表

IXYS IXTQ150N15P

Part Number: IXTQ150N15P

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-3P

Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 150N15P IXTQ 150N15P
VDSS = 150 V ID25 = 150 A RDS(on) 13 m
TO-264 (IXTK) Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 M Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 175° C, RG = 4 TC = 25° C Maximum Ratings 150 150 ±20 ±30 150 75 340 60 80 2.5 10 714 -55 ...

+175 175 -55 ... +175 300 260 V V V V A A A A mJ J V/ns W °C °C °C °C °C Features

Specifications:

Capacitance Ciss Typ: 5800 pF
Continuous Drain Current Id: 150 A
Current Id Max: 150 A
Drain Source Voltage Vds: 150 V
Junction to Case Thermal Resistance A: 0.21°C/W
Mounting Type: Through Hole
N-channel Gate Charge: 190nC
Number of Pins: 3
On State Resistance: 13 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: TO-3P
Power Dissipation Pd: 714 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 150 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: TO-3P
Transistor Polarity: N Channel
Voltage Vds Typ: 150 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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