Datasheet NTE2395 - NTE Electronics MOSFET, N — 数据表

NTE Electronics NTE2395

Part Number: NTE2395

详细说明

Manufacturer: NTE Electronics

Description: MOSFET, N

Docket:
NTE2395 MOSFET NCh, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C (Note 1) .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C GatetoSource Voltage, VGS . . . . . . . . . . . . . .

Specifications:

Continuous Drain Current Id: 50 A
Current Id Max: 50 A
Drain Source Voltage Vds: 60 V
Mounting Type: Through Hole
Number of Pins: 3
On State Resistance: 28 MOhm
Package / Case: TO-220
Power Dissipation Pd: 150 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: TO-220
Transistor Polarity: N Channel
Voltage Vds Typ: 60 V
Voltage Vgs Max: 4 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes