Datasheet NTE2380 - NTE Electronics N CHANNEL MOSFET, 500 V, 2.5 A TO-220 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: N CHANNEL MOSFET, 500 V, 2.5 A TO-220

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Docket:
NTE2380 (N­Ch) & NTE2381 (P­Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch
Description: The NTE2380 (N­Ch) and NTE2381 (P­Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features: D Silicon Gate for Fast Switching Speeds D Rugged ­ SOA is Power Dissipation Limited D Source­to­Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: Drain­Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain­Gate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate­Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous NTE2380 . . .

Specifications:

• Continuous Drain Current Id: 2.5 A
• Drain Source Voltage Vds: 500 V
• On Resistance Rds(on): 3 Ohm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB