Datasheet NTE2382 - NTE Electronics N CHANNEL MOSFET, 100 V, 9.2 A TO-220 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: N CHANNEL MOSFET, 100 V, 9.2 A TO-220

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Docket:
NTE2382 MOSFET N­Channel Enhancement Mode, High Speed Switch (Compl to NTE2383)
Description: The NTE2382 is a MOS power N­Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: Drain­Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain­Gate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate­Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current, ID TC = +25°C . . . . . . .

Specifications:

• Continuous Drain Current Id: 9.2 A
• Drain Source Voltage Vds: 100 V
• On Resistance Rds(on): 0.27 Ohm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB