Datasheet NTE2385 - NTE Electronics N CHANNEL MOSFET, 500 V, 8 A, TO-220 — 数据表
Part Number: NTE2385
详细说明
Manufacturer: NTE Electronics
Description: N CHANNEL MOSFET, 500 V, 8 A, TO-220
Docket:
NTE2385 MOSFET NCh, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C GatetoSource Voltage, VGS . . . . . . . . . . . . .
Specifications:
- Continuous Drain Current Id: 8 A
- Drain Source Voltage Vds: 500 V
- On Resistance Rds(on): 850 MOhm
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Polarity: N Channel
RoHS: Yes
Accessories:
- WAKEFIELD SOLUTIONS - 273-AB