Datasheet IXFC74N20P - IXYS MOSFET, N, ISOPLUS220 — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
VDSS ID25
RDS(on)
trr

Specifications:

• Capacitance Ciss Typ: 3300 pF
• Continuous Drain Current Id: 35 A
• Drain Source Voltage Vds: 200 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 107nC
• On State Resistance: 36 MOhm
• Package / Case: ISOPLUS-220
• Power Dissipation Pd: 120 W
• Reverse Recovery Time trr Max: 200 ns
• Rth: 1.25
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOPLUS-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 200 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes