Datasheet IXFV16N80PS - IXYS MOSFET, N, SMD, PLUS220 — 数据表

IXYS IXFV16N80PS

Part Number: IXFV16N80PS

详细说明

Manufacturer: IXYS

Description: MOSFET, N, SMD, PLUS220

Docket:
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS
VDSS = 800 V ID25 = 16 A RDS(on) 600 m trr 250 ns
TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 5 TC = 25°C Maximum Ratings 800 800 ±30 ±40 16 40 8 30 1.0 10 V V V V A A A mJ J V/ns

Specifications:

Capacitance Ciss Typ: 4000 pF
Continuous Drain Current Id: 16 A
Drain Source Voltage Vds: 800 V
Junction to Case Thermal Resistance A: 0.27°C/W
Mounting Type: SMD
N-channel Gate Charge: 70nC
Number of Pins: 3
On State Resistance: 600 MOhm
Package / Case: PLUS220
Power Dissipation Pd: 460 W
Reverse Recovery Time trr Max: 250 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: PLUS220
Transistor Polarity: N Channel
Transistor Type: High Performance (HiPerFET)
Voltage Vds Typ: 800 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes