Datasheet NTE2383 - NTE Electronics P CH MOSFET, -100 V, 10.5 A, TO-220 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: P CH MOSFET, -100 V, 10.5 A, TO-220

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Docket:
NTE2383 MOSFET P­Channel Enhancement Mode, High Speed Switch (Compl to NTE2382)
Description: The NTE2383 is a MOS power P­Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: Drain­Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain­Gate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate­Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current, ID TC = +25°C . . . . . . .

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB