Datasheet IXFN82N60P - IXYS MOSFET, N, SOT-227B — 数据表
Part Number: IXFN82N60P
详细说明
Manufacturer: IXYS
Description: MOSFET, N, SOT-227B
Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 82N60P
VDSS ID25
RDS(on) trr
Specifications:
- Capacitance Ciss Typ: 23000 pF
- Continuous Drain Current Id: 82 A
- Current Id Max: 72 A
- Drain Source Voltage Vds: 600 V
- Junction to Case Thermal Resistance A: 0.12°C/W
- Mounting Type: Screw
- N-channel Gate Charge: 240nC
- Number of Pins: 4
- On State Resistance: 750 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: ISOTOP
- Power Dissipation Pd: 1.04 kW
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 200 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: ISOTOP
- Transistor Polarity: N Channel
- Voltage Vds Typ: 600 V
- Voltage Vgs Max: 30 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- SCHRODER - 20900