Datasheet IXFV30N60PS - IXYS MOSFET, N, SMD, PLUS220 — 数据表

IXYS IXFV30N60PS

Part Number: IXFV30N60PS

详细说明

Manufacturer: IXYS

Description: MOSFET, N, SMD, PLUS220

Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS
VDSS = 600 V ID25 = 30 A RDS(on) 240 m trr 200 ns
PLUS220 (IXFV) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Mounting force TO-247 TO-268 PLUS220 (TO-247) (PLUS220) Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150° C, RG = 4 TC = 25° C Maximum Ratings 600 600 ±30 ±40 30 80 30 50 1.5 20 500 -55 ...

+150 150 -55 ... +150 300 260 V V V V A A A mJ J V/ns W °C °C °C °C °C

Specifications:

Capacitance Ciss Typ: 4000 pF
Continuous Drain Current Id: 30 A
Drain Source Voltage Vds: 600 V
Junction to Case Thermal Resistance A: 0.25°C/W
Mounting Type: SMD
N-channel Gate Charge: 82nC
Number of Pins: 3
On State Resistance: 240 MOhm
Package / Case: PLUS220
Power Dissipation Pd: 500 W
Reverse Recovery Time trr Max: 200 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: PLUS220
Transistor Polarity: N Channel
Transistor Type: High Performance (HiPerFET)
Voltage Vds Typ: 600 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes