Datasheet IXKC20N60C - IXYS MOSFET, N, ISOPLUS220 — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), Superjunction MOSFET Preliminary Data Sheet
VDSS = 600 V ID25 = 14 A RDS(on) = 190 m
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tstg TL VISOL FC Weight

Specifications:

• Capacitance Ciss Typ: 3000 pF
• Continuous Drain Current Id: 14 A
• Drain Source Voltage Vds: 600 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 79nC
• On State Resistance: 190 MOhm
• Package / Case: ISOPLUS-220
• Power Dissipation Pd: 125 W
• Reverse Recovery Time trr Max: 610 ns
• Rth: 1
• Threshold Voltage Vgs Typ: 3.9 V
• Transistor Case Style: ISOPLUS-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes