Datasheet IXKC25N80C - IXYS MOSFET, N, ISOPLUS220 — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

Specifications:

• Capacitance Ciss Typ: 4600 pF
• Continuous Drain Current Id: 20 A
• Drain Source Voltage Vds: 800 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 170nC
• On State Resistance: 150 MOhm
• Package / Case: ISOPLUS-220
• Power Dissipation Pd: 140 W
• Reverse Recovery Time trr Max: 550 ns
• Rth: 0.9
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: ISOPLUS-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 800 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes