Datasheet BSP030,115 - NXP MOSFET, N CH, 30 V, 10 A, SOT223 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N CH, 30 V, 10 A, SOT223

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Docket:
BSP030
N-channel enhancement mode field-effect transistor
Rev.

04 -- 26 July 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSP030 in SOT223.

Specifications:

• Continuous Drain Current Id: 5 A
• Current Id Max: 10 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 4
• On Resistance Rds(on): 30 MOhm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 8.3 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 43 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

其他名称:

BSP030115, BSP030 115