Datasheet BSP230,135 - NXP MOSFET P-CH 300 V 210 mA SOT223 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET P-CH 300 V 210 mA SOT223

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP230 P-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC13b 1997 Oct 21
Philips Semiconductors

Specifications:

• Continuous Drain Current Id: -170 mA
• Current Id Max: -210 mA
• Drain Source Voltage Vds: -300 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 17 Ohm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 1.5 W
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -2.55 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: -300 V
• Voltage Vgs Max: -2.8 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

其他名称:

BSP230135, BSP230 135