Datasheet BSP250,115 - NXP MOSFET P-CH 30 V 3 A SOT223 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET P-CH 30 V 3 A SOT223

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP250 P-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20
Philips Semiconductors

Specifications:

• Continuous Drain Current Id: -1 A
• Current Id Max: -2.8 mA
• Drain Source Voltage Vds: -30 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 250 MOhm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 5 W
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -2.8 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -2.8 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

其他名称:

BSP250115, BSP250 115