Datasheet BSS123 - NXP N CHANNEL MOSFET, 150 mA, 100 V, SOT-23 — 数据表

详细说明

Manufacturer: NXP

Description: N CHANNEL MOSFET, 150 mA, 100 V, SOT-23

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Docket:
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor Logic level FET
FEATURES
· 'Trench' technology · Extremely fast switching · Logic level compatible · Subminiature surface mounting package

Specifications:

• Continuous Drain Current Id: 150 mA
• Current Id Max: 150 mA
• Drain Source Voltage Vds: 100 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 3.5 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 250 mW
• Pulse Current Idm: 600 mA
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.8 V

RoHS: Yes