Datasheet BUK7880-55 - NXP MOSFET, N CH 55 V SOT223 — 数据表
Part Number: BUK7880-55
详细说明
Manufacturer: NXP
Description: MOSFET, N CH 55 V SOT223
Docket:
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.
Using 'trench' technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications.
Specifications:
- Continuous Drain Current Id: 7.5 A
- Current Id Max: 7.5 A
- Drain Source Voltage Vds: 55 V
- Mounting Type: SMD
- Number of Pins: 3
- On Resistance Rds(on): 80 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-223
- Power Dissipation: 1.8 W
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (19-Dec-2011)
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: SOT-223
- Transistor Polarity: N Channel
- Transistor Type: Enhancement
- Voltage Vds Typ: 55 V
- Voltage Vgs Max: 16 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
其他名称:
BUK788055, BUK7880 55