Datasheet BUK9575-55A - NXP MOSFET, N CH 55 V 34 A SOT78 — 数据表
Part Number: BUK9575-55A
详细说明
Manufacturer: NXP
Description: MOSFET, N CH 55 V 34 A SOT78
Docket:
BUK9575-55A; BUK9675-55A
TrenchMOSTM logic level FET
Rev.
01 -- 9 February 2001 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Product availability: BUK9575-55A in SOT78 (TO-220AB) BUK9675-55A in SOT404 (D 2-PAK).
Specifications:
- Continuous Drain Current Id: 20 A
- Current Id Max: 20 A
- Drain Source Voltage Vds: 55 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On State Resistance: 68 MOhm
- Operating Temperature Range: -55°C to +175°C
- Package / Case: SOT-78A
- Power Dissipation Pd: 62 W
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (18-Jun-2010)
- Threshold Voltage Vgs Typ: 1.5 V
- Transistor Case Style: SOT-78A
- Transistor Polarity: N Channel
- Transistor Type: Enhancement
- Voltage Vds Typ: 55 V
- Voltage Vgs Max: 10 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
其他名称:
BUK957555A, BUK9575 55A