Datasheet PH8230E - NXP MOSFET, N, 30 V, LFPAK — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N, 30 V, LFPAK

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Docket:
PH8230E
N-channel TrenchMOSTM enhanced logic level FET
M3D748
Rev.

03 -- 02 March 2004
Product data

Simulation Model

Specifications:

• Continuous Drain Current Id: 67 A
• Current Id Max: 67 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 6.2 mm
• External Length / Height: 1.2 mm
• External Width: 5 mm
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 14nC
• Number of Pins: 4
• On State Resistance @ Vgs = 4.5V: 11 Ohm
• On State Resistance Max: 8.2 Ohm
• On State Resistance: 7.6 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-669
• Power Dissipation Pd: 62.5 W
• Pulse Current Idm: 268 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.7 V
• Transistor Case Style: SOT-669
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7