Datasheet PHK5NQ15T - NXP MOSFET, N, SO-8 — 数据表
Part Number: PHK5NQ15T
详细说明
Manufacturer: NXP
Description: MOSFET, N, SO-8
Docket:
PHK5NQ15T
TrenchMOSTM standard level FET
M3D315
Rev.
01 -- 20 January 2003
Product data
Specifications:
- Continuous Drain Current Id: 5 A
- Current Id Max: 5 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 150 V
- External Depth: 5.2 mm
- External Length / Height: 1.75 mm
- External Width: 4.05 mm
- Full Power Rating Temperature: 25°C
- Mounting Type: SMD
- Number of Pins: 8
- Number of Transistors: 1
- On State Resistance: 75 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOIC
- Power Dissipation Pd: 6.25 W
- Pulse Current Idm: 20 A
- Rds(on) Test Voltage Vgs: 10 V
- Row Pitch: 6.3 mm
- SMD Marking: PHK5NQ15T
- SVHC: No SVHC (18-Jun-2010)
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vds Typ: 150 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes