Datasheet PMV31XN - NXP MOSFET, N, SOT-23 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N, SOT-23

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Docket:
PMV31XN
µTrenchMOSTM extremely low level FET
Rev.

01 -- 26 February 2003 Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PMV31XN in SOT23.

Specifications:

• Continuous Drain Current Id: 5.9 A
• Current Id Max: 5.9 A
• Current Temperature: 25°C
• Device Marking: PMV31XN
• Drain Source Voltage Vds: 20 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 31 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 2 W
• Power Dissipation Ptot Max: 2 W
• Pulse Current Idm: 23.7 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (18-Jun-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1.5 V

RoHS: Yes

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• LICEFA - V11-7
• Roth Elektronik - RE901