Datasheet PMZ250UN,315 - NXP MOSFET, N CH, 20 V, 2.28 A, SOT883 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N CH, 20 V, 2.28 A, SOT883

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Docket:
PMZ250UN
N-channel TrenchMOS extremely low level FET
Rev.

01 -- 21 February 2008
BOTTOM VIEW
Product data sheet

Specifications:

• Continuous Drain Current Id: 200 mA
• Current Id Max: 2.28 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 300 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-883
• Power Dissipation: 2.5 W
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: SOT-883
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 700 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

其他名称:

PMZ250UN315, PMZ250UN 315