Datasheet PSMN1R5-25YL - NXP MOSFET, N CH, 25 V, 100 A, SOT669 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N CH, 25 V, 100 A, SOT669

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Docket:
PSMN1R5-25YL
N-channel TrenchMOS logic level FET
Rev.

01 -- 16 June 2009 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Current Id Max: 100 A
• Drain Source Voltage Vds: 25 V
• Number of Pins: 4
• On State Resistance: 1.13 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 109 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-669
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Y-Ex

其他名称:

PSMN1R525YL, PSMN1R5 25YL