Datasheet PHB101NQ03LT - NXP MOSFET, N 30 V D2-PAK — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N 30 V D2-PAK

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Docket:
PHB/PHD101NQ03LT
TrenchMOSTM logic level FET
Rev.

02 -- 25 February 2003 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PHB101NQ03LT in SOT404 (D2-PAK) PHD101NQ03LT in SOT428 (D-PAK).

Specifications:

• Alternate Case Style: D2-PAK
• Continuous Drain Current Id: 75 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• On State Resistance: 5.8 MOhm
• Package / Case: D2-PAK
• Power Dissipation Pd: 166 W
• Pulse Current Idm: 240 A
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Voltage Vds: 30 V
• Voltage Vgs th Max: 2.5 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D2 PAK
• Fischer Elektronik - FK 244 13 D2 PAK
• Fischer Elektronik - WLK 5