Datasheet PHD101NQ03LT - NXP MOSFET, N, 30 V, D-PAK — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N, 30 V, D-PAK

Download Data Sheet

Docket:
PHD101NQ03LT
N-channel TrenchMOS logic level FET
Rev.

04 -- 9 June 2009 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Alternate Case Style: TO-252
• Continuous Drain Current Id: 75 A
• Current Id Max: 75 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• On State Resistance: 5 MOhm
• Operating Temperature Range: -55пїЅпїЅC to +175°C
• Package / Case: DPAK
• Power Dissipation Pd: 166 W
• Pulse Current Idm: 240 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: PHD101NQ03LT
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.9 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D2 PAK
• Fischer Elektronik - FK 244 13 D2 PAK
• Fischer Elektronik - WLK 5