Datasheet PHK4NQ20T - NXP MOSFET, N, SO-8 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N, SO-8

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Docket:
PHK4NQ20T
TrenchMOSTM standard level FET
M3D315
Rev.

01 -- 20 January 2003
Product data

Specifications:

• Continuous Drain Current Id: 4 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 200 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On State Resistance: 130 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 6.25 W
• Pulse Current Idm: 16 A
• Row Pitch: 6.3 mm
• SMD Marking: PHK4NQ20T
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 200 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes