Datasheet MTD6N20ET4G - ON Semiconductor MOSFET, N, D-PAK — 数据表

详细说明

Manufacturer: ON Semiconductor

Description: MOSFET, N, D-PAK

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Simulation Model

Specifications:

• Alternate Case Style: D-PAK
• Continuous Drain Current Id: 6 A
• Current Id Max: 6 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 200 V
• External Depth: 10.5 mm
• External Length / Height: 2.55 mm
• External Width: 6.8 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 700 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DPAK
• Power Dissipation Pd: 50 W
• Pulse Current Idm: 18 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: 6N20E
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 200 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes